- 您现在的位置：买卖IC网 > Sheet目录368 > W25Q64DWZEIG (Winbond Electronics)IC FLASH SPI 64MBIT 8WSON
W25Q64DW
10.2.24 64KB Block Erase (D8h)
The Block Erase instruction sets all memory within a specified block (64K-bytes) to the erased state of all
1s (FFh). A Write Enable instruction must be executed before the device will accept the Block Erase
Instruction (Status Register bit WEL must equal 1). The instruction is initiated by driving the /CS pin low
and shifting the instruction code “D8h” followed a 24-bit block address (A23-A0). The Block Erase
instruction sequence is shown in Figure 23a & 23b.
The /CS pin must be driven high after the eighth bit of the last byte has been latched. If this is not done the
Block Erase instruction will not be executed. After /CS is driven high, the self-timed Block Erase instruction
will commence for a time duration of t BE (See AC Characteristics). While the Block Erase cycle is in
progress, the Read Status Register instruction may still be accessed for checking the status of the BUSY
bit. The BUSY bit is a 1 during the Block Erase cycle and becomes a 0 when the cycle is finished and the
device is ready to accept other instructions again. After the Block Erase cycle has finished the Write
Enable Latch (WEL) bit in the Status Register is cleared to 0. The Block Erase instruction will not be
executed if the addressed page is protected by the Block Protect (CMP, SEC, TB, BP2, BP1, and BP0)
bits (see Status Register Memory Protection table).
/CS
Mode 3
0
1
2
3
4
5
6
7
8
9
29
30
31
Mode 3
CLK
Mode 0
Instruction (D8h)
24-Bit Address
Mode 0
DI
(IO 0 )
DO
High Impedance
23
*
22
2
1
0
(IO 1 )
* = MSB
/CS
Figure 23a. 64KB Block Erase Instruction (SPI Mode)
Mode 3
0
1
2
3
4
5
6
7
Mode 3
CLK
Mode 0
Mode 0
In structio n
D8h
A23-16
A15-8
A7-0
IO 0
IO 1
IO 2
IO 3
20
21
22
23
16
17
18
19
12
13
14
15
8
9
10
11
4
5
6
7
0
1
2
3
Figure 23b. 64KB Block Erase Instruction (QPI Mode)
Publication Release Date: September 18, 2012
- 47 -
Revision D
发布紧急采购，3分钟左右您将得到回复。
相关PDF资料
W25Q64FVSFIG
IC SPI FLASH 64MBIT 16SOIC
W25Q80BVSNIG
IC SPI FLASH 8MBIT 8SOIC
W25Q80BWSSIG
IC FLASH SPI 8MBIT 8SOIC
W25X40BVZPIG
IC SPI FLASH 4MBIT 8WSON
W25X64VZEIG
IC FLASH 64MBIT 75MHZ 8WSON
W25X80AVDAIZ
IC FLASH 16MBIT 100MHZ 8DIP
W29GL032CB7A
IC FLASH 32MBIT 70NS 48TFBGA
W29GL064CB7S
IC FLASH 64MBIT 70NS 48TSOP
相关代理商/技术参数
W25Q64DWZEIP
制造商:WINBOND 制造商全称:Winbond 功能描述:1.8V 64M-BIT SERIAL FLASH MEMORY WITH DUAL/QUAD SPI & QPI
W25Q64DWZPIG
功能描述:IC FLASH SPI 64MBIT 8WSON RoHS:是 类别:集成电路 (IC) >> 存储器 系列:SpiFlash® 标准包装:1 系列:- 格式 - 存储器:闪存 存储器类型:闪存 - NAND 存储容量:4G（256M x 16） 速度:- 接口:并联 电源电压:2.7 V ~ 3.6 V 工作温度:0°C ~ 70°C 封装/外壳:48-TFSOP（0.724"，18.40mm 宽） 供应商设备封装:48-TSOP I 包装:Digi-Reel® 其它名称:557-1461-6
W25Q64DWZPIP
制造商:WINBOND 制造商全称:Winbond 功能描述:1.8V 64M-BIT SERIAL FLASH MEMORY WITH DUAL/QUAD SPI & QPI
W25Q64FVDAIG
制造商:WINBOND 制造商全称:Winbond 功能描述:3V 64M-BIT SERIAL FLASH MEMORY WITH DUAL/QUAD SPI & QPI
W25Q64FVDAIP
制造商:WINBOND 制造商全称:Winbond 功能描述:3V 64M-BIT SERIAL FLASH MEMORY WITH DUAL/QUAD SPI & QPI
W25Q64FVSFIG
功能描述:IC SPI FLASH 64MBIT 16SOIC RoHS:是 类别:集成电路 (IC) >> 存储器 系列:SpiFlash® 标准包装:72 系列:- 格式 - 存储器:RAM 存储器类型:SRAM - 同步 存储容量:4.5M（256K x 18） 速度:133MHz 接口:并联 电源电压:3.135 V ~ 3.465 V 工作温度:0°C ~ 70°C 封装/外壳:100-LQFP 供应商设备封装:100-TQFP（14x20） 包装:托盘
W25Q64FVSFIG TR
制造商:Winbond Electronics Corp 功能描述: 制造商:Winbond Electronics Corp 功能描述:IC FLASH 64MBIT 104MHZ 16SOIC
W25Q64FVSFIP
制造商:WINBOND 制造商全称:Winbond 功能描述:3V 64M-BIT SERIAL FLASH MEMORY WITH DUAL/QUAD SPI & QPI